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Technology
Area
Power supply
Frequency
Capacity
Operation Mode
Date Rate
Power consumption
Latency
Released Date
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90nm, diode-switch PRAM, 3-metal CMOS
3,085レm x 1,940レm
1.8V
100MHz
4Mb ( 256k x 16 bit )
SM : Single access mode
BM : Burst access mode
SDM : Setup and debug mode
RM : RISC Operation mode
100Mb/s/pin read and write ( in BM )
SM: 21.6mW BM: 28.4 mW
SM: 12 cycle BM: 16 cycle
Apr. 2006 |