2004
RamP-Lite
Technology
Chip Size
Gate Count
Function
Clock Frequency
Pixel Fill Rate
Power Supply
Power Consumption
Pin Package
Released Date
Samsung 0.18 μm 1-poly 6-metal CMOS Technology
5 mm x 5 mm (Core: 1.59 mm x 1.59 mm)
181 K
- Lighting
- Triangle Setup
- Gouraud Shading
- Texture Mapping
- Alpha Blending
20 MHz
20 Mpixels/s
1.8 V (Core) / 3.3 V (I/O)
14.7 mW
208 pin QFP
Oct. 2004…
|
2004
RamP-Lite
|
Technology
Chip Size
Gate Count
Function
Clock Frequency
Pixel Fill Rate
Power Supply
Power Consumption
Pin Package
Released Date |
Samsung 0.18 μm 1-poly 6-metal CMOS Technology
5 mm x 5 mm (Core: 1.59 mm x 1.59 mm)
181 K
- Lighting
- Triangle Setup
- Gouraud Shading
- Texture Mapping
- Alpha Blending
20 MHz
20 Mpixels/s
1.8 V (Core) / 3.3 V (I/O)
14.7 mW
208 pin QFP
Oct. 2004… |
2004
Preamplifier, PLL, Sigma-Delta Modulator
Technology
Chip Size
Function
Clock Frequency
Power Supply
Power Consumption
Released Date
0.25 μm DongbuAnam CMOS Technology
2 mm x 2 mm
- Automatic Gain Control Preamplifier with Exponential Gain Control
- PLL
- Sigma-Delta Modulator
N/A (Preamplifier) / 2 GHz (PLL) / 1/2 MHz (Modulator)
1.1 V / 2.0 V / 0.9 V
40 μ W
Sep. 2004
|
2004
Preamplifier, PLL, Sigma-Delta Modulator
|
Technology
Chip Size
Function
Clock Frequency
Power Supply
Power Consumption
Released Date |
0.25 μm DongbuAnam CMOS Technology
2 mm x 2 mm
- Automatic Gain Control Preamplifier with Exponential Gain Control
- PLL
- Sigma-Delta Modulator
N/A (Preamplifier) / 2 GHz (PLL) / 1/2 MHz (Modulator)
1.1 V / 2.0 V / 0.9 V
40 μ W
Sep. 2004 |
2004
RamP-V
Technology
Chip Size
Power Supply
Operating Frequency
Processing Speed
GateCounts
Transistors
Power Consumption
Functions
Released Date
0.18 μm 1P 6M CMOS Logic Process
6 mm x6 mm
3.3V (I/O), 1.8V(Core)
200 MHz
50M Verticles/s, 50Mpixel/s (Bilinear Texture Filtering)
2M Logic Gates
96kB SRAM
< 155mW
Fixed-Point Programmable Vertex Shader
Sep. 2004
|
2004
RamP-V
|
Technology
Chip Size
Power Supply
Operating Frequency
Processing Speed
GateCounts
Transistors
Power Consumption
Functions
Released Date |
0.18 μm 1P 6M CMOS Logic Process
6 mm x6 mm
3.3V (I/O), 1.8V(Core)
200 MHz
50M Verticles/s, 50Mpixel/s (Bilinear Texture Filtering)
2M Logic Gates
96kB SRAM
< 155mW
Fixed-Point Programmable Vertex Shader
Sep. 2004 |
2004
Autonomous SRAM with SAC Scheme
Technology
Chip Size
Density
Function
Power Supply
Released Date
Samsung 80 nm Double-Stacked Cell Technology
1152 μ m x 1728 μ m
512 Kb
- Sensing Internal Status of SRAM
- Analyzing the Data and Control Internal Parameters
1.6 V (Internal) / 3.3 V (External)
Aug. 2004
|
2004
Autonomous SRAM with SAC Scheme
|
Technology
Chip Size
Density
Function
Power Supply
Released Date |
Samsung 80 nm Double-Stacked Cell Technology
1152 μ m x 1728 μ m
512 Kb
- Sensing Internal Status of SRAM
- Analyzing the Data and Control Internal Parameters
1.6 V (Internal) / 3.3 V (External)
Aug. 2004 |
2004
Network-on-Chip with High-speed Serial Links
Technology
Chip Size
Function
Clock Frequency
Power Supply
Power Consumption
Released Date
0.18 μm DongbuAnam CMOS Technology
5 mm x 5 mm
- A Network-on-Chip with 3Gbps/wire Serialized On-chip
Interconnect Using Adaptive Control Schemes
400MHz input, 1.6 ~ 3.0 Gb/s/wire operation
1.8V (core), 3.3V (I/O)
N/A
May. 2004
|
2004
Network-on-Chip with High-speed Serial Links
|
Technology
Chip Size
Function
Clock Frequency
Power Supply
Power Consumption
Released Date |
0.18 μm DongbuAnam CMOS Technology
5 mm x 5 mm
- A Network-on-Chip with 3Gbps/wire Serialized On-chip
Interconnect Using Adaptive Control Schemes
400MHz input, 1.6 ~ 3.0 Gb/s/wire operation
1.8V (core), 3.3V (I/O)
N/A
May. 2004 |