2023
C-Transformer
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption
Released Date
Samsung 28 nm 1P8M CMOS Process
4.5mm × 4.5mm 0.7V ~ 1.1V Complementary DNN-Transformer / Spiking-Transformer Processor Maximum: 200MHz 47.5mW ~ 469.2mW Aug. 2023
|
2023
C-Transformer
|
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption
Released Date |
Samsung 28 nm 1P8M CMOS Process
4.5mm × 4.5mm 0.7V ~ 1.1V Complementary DNN-Transformer / Spiking-Transformer Processor Maximum: 200MHz 47.5mW ~ 469.2mW Aug. 2023 |
2023
NeuGPU
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption
Released Date
Samsung 28 nm 1P8M CMOS Process
4.5mm × 4.5mm 0.68V ~ 0.9V Neural Graphics Processing Unit Maximum: 200MHz Modeling: 559.5 mW / Rendering: 728.4 mW
Aug. 2023
|
2023
NeuGPU
|
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption
Released Date |
Samsung 28 nm 1P8M CMOS Process
4.5mm × 4.5mm 0.68V ~ 0.9V Neural Graphics Processing Unit Maximum: 200MHz Modeling: 559.5 mW / Rendering: 728.4 mW
Aug. 2023 |
2022
C-DNN
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption
Released Date
Samsung 28 nm 1P8M CMOS Process
4.5mm × 4.5mm 0.7V ~ 1.1V Complementary DNN Processor Maximum: 200MHz ~40mW Aug. 2022
|
2022
C-DNN
|
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption
Released Date |
Samsung 28 nm 1P8M CMOS Process
4.5mm × 4.5mm 0.7V ~ 1.1V Complementary DNN Processor Maximum: 200MHz ~40mW Aug. 2022 |
2022
MetaVRain
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption
Released Date
Samsung 28 nm 1P8M CMOS Process
4.5mm × 4.5mm 0.6V ~ 0.95V NeRF-based 3D Neural Rendering Processor 50MHz ~ 250MHz 133mW ~ 899mW Aug. 2022
|
2022
MetaVRain
|
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption
Released Date |
Samsung 28 nm 1P8M CMOS Process
4.5mm × 4.5mm 0.6V ~ 0.95V NeRF-based 3D Neural Rendering Processor 50MHz ~ 250MHz 133mW ~ 899mW Aug. 2022 |
2022
DynaPlasia
Technology
Chip Size
Function
PIM Cells Peak Throughput
Released Date
Samsung 28nm 1P8M CMOS Process
4.5mm × 4.5mm eDRAM IMC-based Mobile DNN Inference 9600Kb 19.5 TOPS (4b-5b) Aug. 2022
|
2022
DynaPlasia
|
Technology
Chip Size
Function
PIM Cells Peak Throughput
Released Date |
Samsung 28nm 1P8M CMOS Process
4.5mm × 4.5mm eDRAM IMC-based Mobile DNN Inference 9600Kb 19.5 TOPS (4b-5b) Aug. 2022
|
2021
DSPU
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption
Released Date
Samsung 28nm 1P8M CMOS Process 3.6mm x 3.6mm 0.72V ~ 1.1V 3D Object Recognition Processor Maximum: 250MHz 440mW Jul. 2021
|
2021
DSPU
|
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption
Released Date |
Samsung 28nm 1P8M CMOS Process 3.6mm x 3.6mm 0.72V ~ 1.1V 3D Object Recognition Processor Maximum: 250MHz 440mW Jul. 2021 |
2021
Neuro-CIM
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption
Released Date
Samsung 28nm 1P8M CMOS Process 3.2mm x 0.9mm 1.1V Neuromorphic Network Acceleration in Mobile Devices Maximum: 200MHz 105.44mW ~ 241.44mW Jun. 2021
|
2021
Neuro-CIM
|
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption
Released Date |
Samsung 28nm 1P8M CMOS Process 3.2mm x 0.9mm 1.1V Neuromorphic Network Acceleration in Mobile Devices Maximum: 200MHz 105.44mW ~ 241.44mW Jun. 2021 |
2021
SNPU
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption
Released Date
Samsung 28nm 1P8M CMOS Process 3.2mm x 1.9mm 0.63V ~ 1.1V Spike-Neural-Network Acceleration in Mobile Devices Maximum: 200MHz 0.31mW ~ 186.84mW Jun. 2021
|
2021
SNPU
|
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption
Released Date |
Samsung 28nm 1P8M CMOS Process 3.2mm x 1.9mm 0.63V ~ 1.1V Spike-Neural-Network Acceleration in Mobile Devices Maximum: 200MHz 0.31mW ~ 186.84mW Jun. 2021 |
2020
PNNPU
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption
Released Date
65nm 1P8M CMOS Process 4mm x 4mm 0.78V ~ 1.1V Mobile Intelligent 3D Vision NPU 50MHz ~ 200MHz 331mW Aug. 2020
|
2020
PNNPU
|
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption
Released Date |
65nm 1P8M CMOS Process 4mm x 4mm 0.78V ~ 1.1V Mobile Intelligent 3D Vision NPU 50MHz ~ 200MHz 331mW Aug. 2020 |
2020
HNPU
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption
Released Date
Samsung 28nm 1P8M CMOS Process
3.6 mm x 3.6 mm 0.58~1.04V Mobile DNN Inference & Training + Privacy-preserving Cloud-edge Co-training Maximum: 250 MHz 1.95 mW ~ 1162 mW Jul. 2020
|
2020
HNPU
|
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption
Released Date |
Samsung 28nm 1P8M CMOS Process
3.6 mm x 3.6 mm 0.58~1.04V Mobile DNN Inference & Training + Privacy-preserving Cloud-edge Co-training Maximum: 250 MHz 1.95 mW ~ 1162 mW Jul. 2020
|
2020
OmniDRL
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption
Released Date
28nm CMOS Process
3.6 mm x 3.6 mm 0.68V ~ 1.1 V Deep Reinforcement Learning ~250 MHz 3.1 mW ~ 282.8 mW (Peak) Aug. 2020
|
2020
OmniDRL
|
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption
Released Date |
28nm CMOS Process
3.6 mm x 3.6 mm 0.68V ~ 1.1 V Deep Reinforcement Learning ~250 MHz 3.1 mW ~ 282.8 mW (Peak) Aug. 2020
|
2020
MAC
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption
Released Date
Samsung 28nm FDSOI
2.7mm x 2.7mm
0.3 ~ 1V (Analog), 1V (Digital)
ECG Arrhythmia detection 1kHz ~ 30kHz (Analog), 100MHz (Digital)
1uW
Jan. 2020
|
2020
MAC
|
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption
Released Date |
Samsung 28nm FDSOI
2.7mm x 2.7mm
0.3 ~ 1V (Analog), 1V (Digital)
ECG Arrhythmia detection 1kHz ~ 30kHz (Analog), 100MHz (Digital)
1uW
Jan. 2020 |
2019
EIT
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption
Released Date
65nm 1P8M CMOS Process
4.0 mm x 4.0 mm 3.3 V (Analog), 1.8V (Digital) Electrical Impedance Tomography 10 kHz ~ 10 MHz 9.6 mW/Ch
July. 2019
|
2019
EIT
|
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption
Released Date |
65nm 1P8M CMOS Process
4.0 mm x 4.0 mm 3.3 V (Analog), 1.8V (Digital) Electrical Impedance Tomography 10 kHz ~ 10 MHz 9.6 mW/Ch
July. 2019
|
2019
GANPU
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption
Released Date
65 nm 1P8M CMOS Process 8.1 mm x 4.0 mm 0.70 V ~ 1.1 V Generative Adversarial Network Inference & Training Maximum 200 MHz Maximum 647 mW Jul. 2019
|
2019
GANPU
|
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption
Released Date |
65 nm 1P8M CMOS Process 8.1 mm x 4.0 mm 0.70 V ~ 1.1 V Generative Adversarial Network Inference & Training Maximum 200 MHz Maximum 647 mW Jul. 2019
|
2018
LNPU
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption
Released Date
65nm 1P8M CMOS Process
4mm x 4mm
0.78V ~ 1.1V
DNN Learning 50MHz ~ 200MHz
43.1mW ~ 367mW(Peak)
Jul. 2018
|
2018
LNPU
|
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption
Released Date |
65nm 1P8M CMOS Process
4mm x 4mm
0.78V ~ 1.1V
DNN Learning 50MHz ~ 200MHz
43.1mW ~ 367mW(Peak)
Jul. 2018 |
2018
IOT
Technology
Chip Size
Power Supply
Function
Power Consumption
Released Date
180nm High Voltage CMOS Process
3.3mm x 5mm
1.8V for Supply, 7V for LED
Optical and Electrical Dual Tomographic Imaging
7.6mW for Average
Aug. 2018
|
2018
IOT
|
Technology
Chip Size
Power Supply
Function
Power Consumption
Released Date |
180nm High Voltage CMOS Process
3.3mm x 5mm
1.8V for Supply, 7V for LED
Optical and Electrical Dual Tomographic Imaging
7.6mW for Average
Aug. 2018 |
2018
ICE
Technology
Chip Size
Power Supply
Function
Power Consumption
Released Date
180nm 1P6M CMOS Process
2.35mm x 5.0mm
1.5V
Intracardiac Echocardiography
TX: 3.31mW(5Vpp), 9.26mW(13.2Vpp), RX: 0.95mW
Jul. 2018
|
2018
ICE
|
Technology
Chip Size
Power Supply
Function
Power Consumption
Released Date |
180nm 1P6M CMOS Process
2.35mm x 5.0mm
1.5V
Intracardiac Echocardiography
TX: 3.31mW(5Vpp), 9.26mW(13.2Vpp), RX: 0.95mW
Jul. 2018 |
2018
GLY
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption Resolution Phase Error
Released Date
65nm 1P8M CMOS Process
3.55mm x 1.36mm
0.5V
Bio-Impedance Sensor 20kHz ~ 50kHz
9.26μW 15.28mΩ/√Hz <0.55°
Jul. 2018
|
2018
GLY
|
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption Resolution Phase Error
Released Date |
65nm 1P8M CMOS Process
3.55mm x 1.36mm
0.5V
Bio-Impedance Sensor 20kHz ~ 50kHz
9.26μW 15.28mΩ/√Hz <0.55°
Jul. 2018 |
2018
CNPU
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption
Released Date
65nm 1P8M CMOS Process
4mm x 4mm
0.67V ~ 1.1V
Mobile Deep Reinforcement Learning 10MHz ~ 200MHz
2.4mW ~ 196mW(Peak)
Jul. 2018
|
2018
CNPU
|
Technology
Chip Size
Power Supply
Function Operating Frequency
Power Consumption
Released Date |
65nm 1P8M CMOS Process
4mm x 4mm
0.67V ~ 1.1V
Mobile Deep Reinforcement Learning 10MHz ~ 200MHz
2.4mW ~ 196mW(Peak)
Jul. 2018 |
2017
BASE
Technology
Chip Size
Power Supply
Function
Power Consumption
Released Date
65nm 1P8M CMOS Process
4mm x 4mm
1.0V, 3.0V
Body Channel Communication
TX: 0.8mW ~ 1.7mW (Peak) / RX: 8mW
Aug. 2017
|
2017
BASE
|
Technology
Chip Size
Power Supply
Function
Power Consumption
Released Date |
65nm 1P8M CMOS Process
4mm x 4mm
1.0V, 3.0V
Body Channel Communication
TX: 0.8mW ~ 1.7mW (Peak) / RX: 8mW
Aug. 2017 |
2017
CSP
Technology
Chip Size
Power Supply
Function
Frequency
Power Consumption
Released Date
65nm 1P8M CMOS Process
4mm x 4mm
0.9V ~ 1.2V
Convolutional Neural Network
10MHz ~ 100MHz
9.02mW ~ 31.20mW (Peak)
Aug. 2017
|
2017
CSP
|
Technology
Chip Size
Power Supply
Function
Frequency
Power Consumption
Released Date |
65nm 1P8M CMOS Process
4mm x 4mm
0.9V ~ 1.2V
Convolutional Neural Network
10MHz ~ 100MHz
9.02mW ~ 31.20mW (Peak)
Aug. 2017 |
2017
UNPU
Technology
Chip Size
Power Supply
Function
Operating Frequency
Power Consumption
Released Date
65nm 1P8M CMOS Process
4mm x 4mm
0.63 ~ 1.1V
Deep Neural Network
5MHz ~ 200MHz
3.2mW ~ 297mW (Peak)
Aug. 2017
|
2017
UNPU
|
Technology
Chip Size
Power Supply
Function
Operating Frequency
Power Consumption
Released Date |
65nm 1P8M CMOS Process
4mm x 4mm
0.63 ~ 1.1V
Deep Neural Network
5MHz ~ 200MHz
3.2mW ~ 297mW (Peak)
Aug. 2017 |
2016
ANES
Technology
Chip Size
Power Supply
Function
Power Consumption
Released Date
65nm 1P8M CMOS Process
4mm x 4mm
1.2V, 3.3V
EEG + NIRS Anesthesia Monitoring
25.2mW (Peak)
Jul. 2016
|
2016
ANES
|
Technology
Chip Size
Power Supply
Function
Power Consumption
Released Date |
65nm 1P8M CMOS Process
4mm x 4mm
1.2V, 3.3V
EEG + NIRS Anesthesia Monitoring
25.2mW (Peak)
Jul. 2016 |
2016
CNNP
Technology
Chip Size
Power Supply
Function
Frequency
Power Consumption
Released Date
65nm 1P8M CMOS Process
4mm x 4mm
0.46V ~ 1.0V
Convolutional Neural Network
5MHz ~ 100MHz
5.3mW ~ 211mW (Peak)
Aug. 2016
|
2016
CNNP
|
Technology
Chip Size
Power Supply
Function
Frequency
Power Consumption
Released Date |
65nm 1P8M CMOS Process
4mm x 4mm
0.46V ~ 1.0V
Convolutional Neural Network
5MHz ~ 100MHz
5.3mW ~ 211mW (Peak)
Aug. 2016 |
2016
FIS
Technology
Chip Size
Power Supply
Function
Operating Frequency
Power Consumption
Released Date
65nm Triple-Well CMOS Technology
3.3mm x 3.36mm
2.5V (Pixel), 0.5V ~ 1.2V (Other)
Face Detection (Viola Jones)
7MHz ~ 245MHz
24μW (Avg.)
Aug. 2016
|
2016
FIS
|
Technology
Chip Size
Power Supply
Function
Operating Frequency
Power Consumption
Released Date |
65nm Triple-Well CMOS Technology
3.3mm x 3.36mm
2.5V (Pixel), 0.5V ~ 1.2V (Other)
Face Detection (Viola Jones)
7MHz ~ 245MHz
24μW (Avg.)
Aug. 2016 |
2016
DNPU
Technology
Chip Size
Power Supply
Function
Operating Frequency
Power Consumption
Released Date
65nm 1P8M CMOS
4mm x 4mm (16㎟)
0.77V ~1.1VV
General Purpose Deep Neural-network Processor
50MHz ~ 200MHz
34.6mW (50MHz @0.77V), 279mW (200MHz @1.1V)
Aug. 2016
|
2016
DNPU
|
Technology
Chip Size
Power Supply
Function
Operating Frequency
Power Consumption
Released Date |
65nm 1P8M CMOS
4mm x 4mm (16㎟)
0.77V ~1.1VV
General Purpose Deep Neural-network Processor
50MHz ~ 200MHz
34.6mW (50MHz @0.77V), 279mW (200MHz @1.1V)
Aug. 2016 |
2016
WIT
Technology
Chip Size
Power Supply
Function
Power Consumption
Released Date
65nm Triple-Well CMOS Technology
Sensor: 1.1mm x 2.9mm, Hub: 1.4mm x 0.9mm
1.2V
3D Lung Electrical Impedance Tomography
6.96mW
Aug. 2016
|
2016
WIT
|
Technology
Chip Size
Power Supply
Function
Power Consumption
Released Date |
65nm Triple-Well CMOS Technology
Sensor: 1.1mm x 2.9mm, Hub: 1.4mm x 0.9mm
1.2V
3D Lung Electrical Impedance Tomography
6.96mW
Aug. 2016 |
2015
BRAIN
Technology
Chip Size
Power Supply
Function
Operating Frequency
Power Consumption
Released Date
65nm Triple-Well CMOS Technology
4mm x 4mm
0.55V ~ 1.2V
Ultra-Low-Power Robot AI Processor
(Tree Search + Reinforcement Learning)
7MHz ~ 245MHz
1.1mW ~ 151mW
Jul. 2015
|
2015
BRAIN
|
Technology
Chip Size
Power Supply
Function
Operating Frequency
Power Consumption
Released Date |
65nm Triple-Well CMOS Technology
4mm x 4mm
0.55V ~ 1.2V
Ultra-Low-Power Robot AI Processor
(Tree Search + Reinforcement Learning)
7MHz ~ 245MHz
1.1mW ~ 151mW
Jul. 2015 |
2015
AutoBrain
Technology
Chip Size
Power Supply
Function
Operating Frequency
Peak performance Power Consumption
power efficiency
energy efficiency
Released Date
65nm 1P8M CMOS Process
4.0mm x 4.0mm
1.2V (Nominal), 0.65V~1.2V (DVFS)
Intelligent ADAS & Real-time SGM
250MHz (Nominal), 50MHz~250MHz (DVFS)
502GOPS
330mW (avg.), 582mW (peak)
862GOPS/W
31.4GOPS/mm2
July 2015
|
2015
AutoBrain
|
Technology
Chip Size
Power Supply
Function
Operating Frequency
Peak performance Power Consumption
power efficiency
energy efficiency
Released Date |
65nm 1P8M CMOS Process
4.0mm x 4.0mm
1.2V (Nominal), 0.65V~1.2V (DVFS)
Intelligent ADAS & Real-time SGM
250MHz (Nominal), 50MHz~250MHz (DVFS)
502GOPS
330mW (avg.), 582mW (peak)
862GOPS/W
31.4GOPS/mm2
July 2015 |
2015
MoST
Technology
Chip Size
Power Supply
Function
Key Block
Power Consumption
Released Date
0.18 μm 1P6M CMOS Process
2.35 mm x 5.0 mm
1.5V, 5V
Sticker-type SpO2 / ExG Monitoring System
OLED Driver, OPD Sensor Front-end, Optical Calibration Loop, Clock Broadcasting TRx
141μW ~ 1300μW
Aug. 2015
|
2015
MoST
|
Technology
Chip Size
Power Supply
Function
Key Block
Power Consumption
Released Date |
0.18 μm 1P6M CMOS Process
2.35 mm x 5.0 mm
1.5V, 5V
Sticker-type SpO2 / ExG Monitoring System
OLED Driver, OPD Sensor Front-end, Optical Calibration Loop, Clock Broadcasting TRx
141μW ~ 1300μW
Aug. 2015 |
2015
NINE-X
Technology
Chip Size
Power Supply
Function
Key Block
Power Consumption
Released Date
65 nm 1P8M CMOS Process
4.0 mm x 4.0 mm
0.5~1.2V
Natural User Interface & Experience for HMD
DLE, DIE, TRNG, SSC, HSC, GRE
126.1mW
Aug. 2015
|
2015
NINE-X
|
Technology
Chip Size
Power Supply
Function
Key Block
Power Consumption
Released Date |
65 nm 1P8M CMOS Process
4.0 mm x 4.0 mm
0.5~1.2V
Natural User Interface & Experience for HMD
DLE, DIE, TRNG, SSC, HSC, GRE
126.1mW
Aug. 2015 |
2014
EEG-Connectome Chip
Technology
Chip Size
Power Supply
Function
Channel Frequency
Power Consumption
Released Date
0.18 μm CMOS Process
1.0 mm x 3.8 mm
1.8V
EEG-Connectome Processing
20MHz
1.71mW
Dec. 2014
|
2014
EEG-Connectome Chip
|
Technology
Chip Size
Power Supply
Function
Channel Frequency
Power Consumption
Released Date |
0.18 μm CMOS Process
1.0 mm x 3.8 mm
1.8V
EEG-Connectome Processing
20MHz
1.71mW
Dec. 2014 |
2014
BONE-AR
Technology
Chip Size
Power Supply
Function
Injection Method
Injectable Current
Frame Rate
Power Consumption
Released Date
0.18 μm 1P6M CMOS Technology
2.5 mm x 3.8 mm (including pads)
1.5 V
Electrical Impedance Tomography (EIT)
Dual Frequency Division Multiplexing
125-500μAp-p (10~360kHz)
30fps
4.84mW
Dec. 2014
|
2014
BONE-AR
|
Technology
Chip Size
Power Supply
Function
Injection Method
Injectable Current
Frame Rate
Power Consumption
Released Date |
0.18 μm 1P6M CMOS Technology
2.5 mm x 3.8 mm (including pads)
1.5 V
Electrical Impedance Tomography (EIT)
Dual Frequency Division Multiplexing
125-500μAp-p (10~360kHz)
30fps
4.84mW
Dec. 2014 |
2014
M3H
Technology
Chip Size
Power Supply
Function
Key Accelerators
Power Consumption
Released Date
0.11 μm Dongbu CMOS Process
3.375 mm x 2.25 mm
1.2V, 3.3V
Multimodal Mental Management System IC
Electroencephalography sensor, Near-infrared Spectroscopy sensor
24mW @ maximum condition
Aug. 2014
|
2014
M3H
|
Technology
Chip Size
Power Supply
Function
Key Accelerators
Power Consumption
Released Date |
0.11 μm Dongbu CMOS Process
3.375 mm x 2.25 mm
1.2V, 3.3V
Multimodal Mental Management System IC
Electroencephalography sensor, Near-infrared Spectroscopy sensor
24mW @ maximum condition
Aug. 2014 |
2014
DMLP
Technology
Chip Size
Power Supply
Function
Key Block
Power Consumption
Released Date
65 nm 1P8M CMOS Process
2.5 mm x 4.0 mm
1.2V
Deep Learning and Inference
DLE, DIE, TRNG
185.3mW
Aug. 2014
|
2014
DMLP
|
Technology
Chip Size
Power Supply
Function
Key Block
Power Consumption
Released Date |
65 nm 1P8M CMOS Process
2.5 mm x 4.0 mm
1.2V
Deep Learning and Inference
DLE, DIE, TRNG
185.3mW
Aug. 2014 |
2014
Biocle A
Technology
Chip Size
Power Supply
Function
Modulation
Channel Frequency
Sensitivity
Power Consumption
Released Date
65nm CMOS Technology
1.8 mm x 3.2 mm
1.2V
Body Channel Communication Transceiver
BPSK, OOK
40MHz(40MHz BW), 160MHz(40MHz BW), 13.56MHz(100kHz BW)
-58dBm @ 80Mb/s, -72dBm @ 100kb/s
79pJ/b, 42.5μW
Aug. 2014
|
2014
Biocle A
|
Technology
Chip Size
Power Supply
Function
Modulation
Channel Frequency
Sensitivity
Power Consumption
Released Date |
65nm CMOS Technology
1.8 mm x 3.2 mm
1.2V
Body Channel Communication Transceiver
BPSK, OOK
40MHz(40MHz BW), 160MHz(40MHz BW), 13.56MHz(100kHz BW)
-58dBm @ 80Mb/s, -72dBm @ 100kb/s
79pJ/b, 42.5μW
Aug. 2014 |
2014
NT-FMP
Technology
Chip Size
Function Supply Voltage
Power Consumption
Operating Frequency Released Date
65 nm CMOS Process
4 mm x 0.5 mm
Ultra-low-power Object Matching Processor
0.5V(Logic), 0.8V(SRAM)
54μW
5MHz
|
2014
NT-FMP
|
Technology
Chip Size
Function Supply Voltage
Power Consumption
Operating Frequency Released Date |
65 nm CMOS Process
4 mm x 0.5 mm
Ultra-low-power Object Matching Processor
0.5V(Logic), 0.8V(SRAM)
54μW
5MHz
|
2014
Gaze Image Sensor (GIS)
Technology
Chip Size
Power Supply
Function
Frequency
Peak Performance
Power Consumption
Released Date
65 nm 1P8M CMOS Process
3.36 mm x 3.36 mm
2.5V (Pixel), 1.2V (Other)
Gaze Image Sensor
50MHz
0.3 GOPS
10mW(Average), 34mW(Peak)
Jun. 2014
|
2014
Gaze Image Sensor (GIS)
|
Technology
Chip Size
Power Supply
Function
Frequency
Peak Performance
Power Consumption
Released Date |
65 nm 1P8M CMOS Process
3.36 mm x 3.36 mm
2.5V (Pixel), 1.2V (Other)
Gaze Image Sensor
50MHz
0.3 GOPS
10mW(Average), 34mW(Peak)
Jun. 2014 |
2014
Object Recognition Processor (ORP)
Technology
Chip Size
Power Supply
Function
Frequency
Peak Performance
Power Consumption
Released Date
65 nm 1P8M CMOS Process
4.0 mm x 4.0 mm
1.2V (Normal), 0.7V~1.2V(DVFS)
Object Recognition
50MHz(DGP), 100MHz(FDP/SSP/FMP),
200MHz(CNNP/DRMP/EOGP/FA/NoC)
151 GOPS
65mW(Average), 97mW(Peak)
Jun. 2014
|
2014
Object Recognition Processor (ORP)
|
Technology
Chip Size
Power Supply
Function
Frequency
Peak Performance
Power Consumption
Released Date |
65 nm 1P8M CMOS Process
4.0 mm x 4.0 mm
1.2V (Normal), 0.7V~1.2V(DVFS)
Object Recognition
50MHz(DGP), 100MHz(FDP/SSP/FMP),
200MHz(CNNP/DRMP/EOGP/FA/NoC)
151 GOPS
65mW(Average), 97mW(Peak)
Jun. 2014 |
2013
MSM
Technology
Chip Size
Power Supply
Function
Key Accelerators
Power Consumption
Released Date
0.13 μm 1P8M CMOS Process
2.35 mm x 5.0 mm
3.3V(IO), 0.7-1.0V(Core)
EEG Signal Processing, Transcranial Electrical Stimulation
Independent Component Analysis (ICA), Fast Fourier Transform (FFT),
Support Vector Machine (SVM)
4.45mW
Aug. 2013
|
2013
MSM
|
Technology
Chip Size
Power Supply
Function
Key Accelerators
Power Consumption
Released Date |
0.13 μm 1P8M CMOS Process
2.35 mm x 5.0 mm
3.3V(IO), 0.7-1.0V(Core)
EEG Signal Processing, Transcranial Electrical Stimulation
Independent Component Analysis (ICA), Fast Fourier Transform (FFT),
Support Vector Machine (SVM)
4.45mW
Aug. 2013 |
2013
Gluco Scope2
Technology
Chip Size
Power Supply
Function
Key Block
Power Consumption
Released Date
0.18um 1P6M CMOS Process
2.5 mm x 5.0 mm (including pads)
1.5V
Non-invasive Blood Glucose Level Estimation
Impedance Spectroscopy Circuit,
Multi-wavelength Near-infrared Spectroscopy Circuit
Maximum 38mW
Aug. 2013
|
2013
Gluco Scope2
|
Technology
Chip Size
Power Supply
Function
Key Block
Power Consumption
Released Date |
0.18um 1P6M CMOS Process
2.5 mm x 5.0 mm (including pads)
1.5V
Non-invasive Blood Glucose Level Estimation
Impedance Spectroscopy Circuit,
Multi-wavelength Near-infrared Spectroscopy Circuit
Maximum 38mW
Aug. 2013 |
2013
Biocle5
Technology
Chip Size
Power Supply
Function
Modulation
Channel Frequency
Sensitivity
Power Consumption
Released Date
0.13 μm CMOS Technology
2.5 mm x 5.0 mm
1.2 V
Human Body Communication (HBC) Network Coordinator
Frequency Selective Digital Transmission (FSDT)
21 MHz (5.25 MHz Bandwidth)
-98 dBm @ 124 kbps
33 μW/nodes
Aug. 2013
|
2013
Biocle5
|
Technology
Chip Size
Power Supply
Function
Modulation
Channel Frequency
Sensitivity
Power Consumption
Released Date |
0.13 μm CMOS Technology
2.5 mm x 5.0 mm
1.2 V
Human Body Communication (HBC) Network Coordinator
Frequency Selective Digital Transmission (FSDT)
21 MHz (5.25 MHz Bandwidth)
-98 dBm @ 124 kbps
33 μW/nodes
Aug. 2013 |
2013
SEIT
Technology
Chip Size
Power supply
Function
Sensitivity
Injectable Current
THD
Power Consumption
Released Date
0.18 μm 1P6M CMOS Technology
2.5 mm x 5.0 mm
1.8 V
Electrical Impedance Tomography (EIT)
4.9 mΩ
10-400 μAp-p (0.1-100 kHz)
0.2% @ 200 μAp-p
53.4 mW (USB Supply)
Aug. 2013
|
2013
SEIT
|
Technology
Chip Size
Power supply
Function
Sensitivity
Injectable Current
THD
Power Consumption
Released Date |
0.18 μm 1P6M CMOS Technology
2.5 mm x 5.0 mm
1.8 V
Electrical Impedance Tomography (EIT)
4.9 mΩ
10-400 μAp-p (0.1-100 kHz)
0.2% @ 200 μAp-p
53.4 mW (USB Supply)
Aug. 2013 |
2013
BONE-AR
Technology
Chip Size
Function
Frequency(Nominal)
Peak Performance
Power Dissipation
Area Efficiency
Power Efficiency
Per-frame Energy
Released Date
65nm 1P8M CMOS Process
4.0 mm x 8.0 mm
Markerless Augmented Reality
250 MHz (Digital)
1.22 TOPS
381 mW
38.13 GOPS/mm2
1.57 TOPS/W
12.70 mJ/frame
Jun. 2013
|
2013
BONE-AR
|
Technology
Chip Size
Function
Frequency(Nominal)
Peak Performance
Power Dissipation
Area Efficiency
Power Efficiency
Per-frame Energy
Released Date |
65nm 1P8M CMOS Process
4.0 mm x 8.0 mm
Markerless Augmented Reality
250 MHz (Digital)
1.22 TOPS
381 mW
38.13 GOPS/mm2
1.57 TOPS/W
12.70 mJ/frame
Jun. 2013 |
2012
BONE-V6
Technology
Chip Size
Function
Frequency(Nominal)
Peak Performance
Power Dissipation
Area Efficiency
Power Efficiency
Per-pixel Efficiency
Released Date
0.13 μm 1P8M Mixed-mode CMOS Process
5.0 mm x 5.0 mm
Context-Aware Object Recognition
200 MHz (Digital)
271.4 GOPS
260 mW
10.86 GOPS/mm2
646 GOPS/W
9.4 nJ/Pixel
Aug. 2012
|
2012
BONE-V6
|
Technology
Chip Size
Function
Frequency(Nominal)
Peak Performance
Power Dissipation
Area Efficiency
Power Efficiency
Per-pixel Efficiency
Released Date |
0.13 μm 1P8M Mixed-mode CMOS Process
5.0 mm x 5.0 mm
Context-Aware Object Recognition
200 MHz (Digital)
271.4 GOPS
260 mW
10.86 GOPS/mm2
646 GOPS/W
9.4 nJ/Pixel
Aug. 2012 |
2012
BONE-V5s
Technology
Chip Size
Application
Operating Frequency
Power Consumption
Released Date
65nm 1P8M Logic CMOS
4.0 mm x 4.0 mm
30 fps Object Recognition @ 720p
50–200 MHz
235 mW
Jan. 2012
|
2012
BONE-V5s
|
Technology
Chip Size
Application
Operating Frequency
Power Consumption
Released Date |
65nm 1P8M Logic CMOS
4.0 mm x 4.0 mm
30 fps Object Recognition @ 720p
50–200 MHz
235 mW
Jan. 2012 |
2012
NFC2
Technology
Chip Size
Function
Modulation
Comm. Distance
Speed
Energy
Released Date
0.13 μm 1P6M CMOS Process
2.35 mm x 2.35 mm
mm-range Inductive Coupling Transceiver
Mono-phase Pulse Modulation
>1mm
1.2Gb/s
3.9pJ/b
Aug. 2012
|
2012
NFC2
|
Technology
Chip Size
Function
Modulation
Comm. Distance
Speed
Energy
Released Date |
0.13 μm 1P6M CMOS Process
2.35 mm x 2.35 mm
mm-range Inductive Coupling Transceiver
Mono-phase Pulse Modulation
>1mm
1.2Gb/s
3.9pJ/b
Aug. 2012 |
2012
Smart Ionto
Technology
Chip Size
Power Supply
Function
Life Time
Stimulation Current
Bio-Feedback
Power Consumption
Released Date
0.11 μm 1P6M CMOS Process
2.5 mm x 2.5 mm (including pads)
1.2V
Bio-Feedback Transdermal Drug Delivery
> 3 hours
16-512μA
Load/Tissue Impedance, Skin Temperature
2.2mW
Aug. 2012
|
2012
Smart Ionto
|
Technology
Chip Size
Power Supply
Function
Life Time
Stimulation Current
Bio-Feedback
Power Consumption
Released Date |
0.11 μm 1P6M CMOS Process
2.5 mm x 2.5 mm (including pads)
1.2V
Bio-Feedback Transdermal Drug Delivery
> 3 hours
16-512μA
Load/Tissue Impedance, Skin Temperature
2.2mW
Aug. 2012 |
2012
MSEA
Technology
Chip Size
Function
Modulation
Operating Frequency
Bandwidth
Sensitivity
Power Consumption
Released Date
UMC 0.13 μm CMOS Technology
2.5mm x 5.0 mm (including pads)
IEEE 802.15.6 Standard Compatible Transceiver
FSDT
21MHz
5.25MHz
-97.35dBm
3.2mW(RX), 2.0mW(TX)
Aug. 2012
|
2012
MSEA
|
Technology
Chip Size
Function
Modulation
Operating Frequency
Bandwidth
Sensitivity
Power Consumption
Released Date |
UMC 0.13 μm CMOS Technology
2.5mm x 5.0 mm (including pads)
IEEE 802.15.6 Standard Compatible Transceiver
FSDT
21MHz
5.25MHz
-97.35dBm
3.2mW(RX), 2.0mW(TX)
Aug. 2012 |
2011
IRIS
Technology
Chip Size
Function
Nominal Frequency
Peak Performance
Power Consumption
Per-frame Efficiency
Per-pixel Efficiency
Released Date
0.13 μm 1-P 6-M Logic CMOS Technology
4.0 mm x 8.0 mm
Object Recognition
200MHz @1.2V (Digital)
342 GOPS
534mW (Peak) / 320mW (Ave.)
9.6mJ/Frame
10.5nJ/Pixel
Aug. 2011
|
2011
IRIS
|
Technology
Chip Size
Function
Nominal Frequency
Peak Performance
Power Consumption
Per-frame Efficiency
Per-pixel Efficiency
Released Date |
0.13 μm 1-P 6-M Logic CMOS Technology
4.0 mm x 8.0 mm
Object Recognition
200MHz @1.2V (Digital)
342 GOPS
534mW (Peak) / 320mW (Ave.)
9.6mJ/Frame
10.5nJ/Pixel
Aug. 2011 |
2011
WiPEA
Technology
Chip Size
Power Supply
Function
Life Time
Stimulation Current
Stimulation Freq.
Duty Cycle
Power Consumption
Released Date
0.13 μm 1P8M RF CMOS Technology
2.5mm x 5.0 mm (including pads)
1.2V
Multi-Modal Feedback EA Stimulation
> 1 hour
40μA ~ 1mA
1Hz ~ 500Hz
4% ~ 96%
6.8mW (@1mA EA stimulation)
Aug. 2011
|
2011
WiPEA
|
Technology
Chip Size
Power Supply
Function
Life Time
Stimulation Current
Stimulation Freq.
Duty Cycle
Power Consumption
Released Date |
0.13 μm 1P8M RF CMOS Technology
2.5mm x 5.0 mm (including pads)
1.2V
Multi-Modal Feedback EA Stimulation
> 1 hour
40μA ~ 1mA
1Hz ~ 500Hz
4% ~ 96%
6.8mW (@1mA EA stimulation)
Aug. 2011 |
2011
WHPlatform
Technology
Chip Size
Function
Power Supply
Operating Frequency
Power Consumption
Released Date
0.13 μm CMOS Technology
2.35 mm x 5.0 mm
Mental Health Monitoring System
1.2 V Battery Power
1 MHz
259.6 μw
Aug. 2011
|
2011
WHPlatform
|
Technology
Chip Size
Function
Power Supply
Operating Frequency
Power Consumption
Released Date |
0.13 μm CMOS Technology
2.35 mm x 5.0 mm
Mental Health Monitoring System
1.2 V Battery Power
1 MHz
259.6 μw
Aug. 2011 |
2010
IRIS
Technology
Chip Size
Operating Frequency
Peak Performance
Power Consumption
Released Date
0.13 μm 1-P 8-M Logic CMOS Technology
2.7 mm x 5 mm
200MHz @1.2V (Digital), 10MHz @1.0V (Analog)
49.14 GOPS
61mW
Aug. 2010
|
2010
IRIS
|
Technology
Chip Size
Operating Frequency
Peak Performance
Power Consumption
Released Date |
0.13 μm 1-P 8-M Logic CMOS Technology
2.7 mm x 5 mm
200MHz @1.2V (Digital), 10MHz @1.0V (Analog)
49.14 GOPS
61mW
Aug. 2010 |
2010
WiFAN-IV
Technology
Chip Size
Power Supply
Function
Clock Frequency
Energy Consumption
Power Consumption
Released Date
0.18 μm CMOS Technology
2.45mm x 2.6 mm(Network Controller), 2.45mm x 1.7mm(Sensor)
1.5V
ExG Sensing and Multi-Sensor Network Control
20MHz (TRX), 1.25MHz (Processor), 20kHz (Sensor)
0.33pJ/b
75μW (Network Controller), 25μW (Sensor)
Aug. 2010
|
2010
WiFAN-IV
|
Technology
Chip Size
Power Supply
Function
Clock Frequency
Energy Consumption
Power Consumption
Released Date |
0.18 μm CMOS Technology
2.45mm x 2.6 mm(Network Controller), 2.45mm x 1.7mm(Sensor)
1.5V
ExG Sensing and Multi-Sensor Network Control
20MHz (TRX), 1.25MHz (Processor), 20kHz (Sensor)
0.33pJ/b
75μW (Network Controller), 25μW (Sensor)
Aug. 2010 |
2010
Biocle IV
Technology
Chip Size
Function
Modulation
Sensitivity
Operating Frequency
Power Consumption
Released Date
0.18 μm CMOS Technology
2.5 mm x 5 mm
WBAN Transceiver
Double-FSK
-66dBm
40 - 120 MHz
2.4mW(RX), 2.0mW(TX)
Aug. 2010
|
2010
Biocle IV
|
Technology
Chip Size
Function
Modulation
Sensitivity
Operating Frequency
Power Consumption
Released Date |
0.18 μm CMOS Technology
2.5 mm x 5 mm
WBAN Transceiver
Double-FSK
-66dBm
40 - 120 MHz
2.4mW(RX), 2.0mW(TX)
Aug. 2010 |
2009
BONE-V4
Technology
Chip Size
Function
Operating Frequency
Power Supply
Power Consumption
Released Date
0.13 μm 1-P 8-M CMOS Technology
5 mm x 10 mm
Object Recognition
50~200MHz (PEs) / 400MHz (NoC)
1.2V
345mW
Aug. 2009
|
2009
BONE-V4
|
Technology
Chip Size
Function
Operating Frequency
Power Supply
Power Consumption
Released Date |
0.13 μm 1-P 8-M CMOS Technology
5 mm x 10 mm
Object Recognition
50~200MHz (PEs) / 400MHz (NoC)
1.2V
345mW
Aug. 2009 |
2009
SmartProbe
Technology
Chip Size
Function
Sensitivity
Injectable current
SNR
CMRR
Power Consumption
Released Date
0.18 μm CMOS Technology
5 mm x 5 mm
ECGs/Bio-Impedance monitoring sensor
3.17V/ohm for 0.1ohm
100uAp-p-250uAp-p (90kHz sinusoidal)
>40dB with input noise < 1mohm/srtHz
TIV=91dB, ECG=78dB
3.9mW for communication, 2.4mW for sensing
Aug. 2009
|
2009
SmartProbe
|
Technology
Chip Size
Function
Sensitivity
Injectable current
SNR
CMRR
Power Consumption
Released Date |
0.18 μm CMOS Technology
5 mm x 5 mm
ECGs/Bio-Impedance monitoring sensor
3.17V/ohm for 0.1ohm
100uAp-p-250uAp-p (90kHz sinusoidal)
>40dB with input noise < 1mohm/srtHz
TIV=91dB, ECG=78dB
3.9mW for communication, 2.4mW for sensing
Aug. 2009 |
2008
BONE-V3
Technology
Chip Size
Function
Operating Frequency
Power Supply
Power Consumption
Released Date
0.13 μm 1-P 8-M CMOS Technology
7 mm x 7 mm
Multiple Object Recognition
200MHz (IPs) / 400MHz (NoC)
1.2V
496mW
Sep. 2008
|
2008
BONE-V3
|
Technology
Chip Size
Function
Operating Frequency
Power Supply
Power Consumption
Released Date |
0.13 μm 1-P 8-M CMOS Technology
7 mm x 7 mm
Multiple Object Recognition
200MHz (IPs) / 400MHz (NoC)
1.2V
496mW
Sep. 2008 |
2008
Biocle III
Technology
Chip Size
Function
Sensitivity
Operating Frequency
Power Consumption
Released Date
0.18 μm CMOS Technology
1.9 mm x 2.5 mm
BCC/ MICS Dual-Band Transceiver
-65dBm(BCC), 35 μVrms(MICS)
30 - 70 MHz(BCC), 402- 405 MHz(MICS)
10.8mW(RX), 4.9mW(TX)
Aug. 2008
|
2008
Biocle III
|
Technology
Chip Size
Function
Sensitivity
Operating Frequency
Power Consumption
Released Date |
0.18 μm CMOS Technology
1.9 mm x 2.5 mm
BCC/ MICS Dual-Band Transceiver
-65dBm(BCC), 35 μVrms(MICS)
30 - 70 MHz(BCC), 402- 405 MHz(MICS)
10.8mW(RX), 4.9mW(TX)
Aug. 2008 |
2008
WiFAN-II
Technology
Chip Size
Power Supply
Operating Frequency
Rectifier Type
Rectifier Efficiency
Modulation
Power Consumption
Released Date
0.18 μm 1-P 6-M CMOS Logic Process
5 mm x 3 mm (Network Controller), 2.4 mm x 2 mm (Sensor)
1.8V
13.56 MHz(TX/HF) 402-405MHz(TX/MICS)
4-stage ATR CMOS
54.9% (HF), 45.2%(MICS)
15 % or 100 & ASK
5.2 mW (Network Controller), 12 μw(Sensor)
Aug. 2008
|
2008
WiFAN-II
|
Technology
Chip Size
Power Supply
Operating Frequency
Rectifier Type
Rectifier Efficiency
Modulation
Power Consumption
Released Date |
0.18 μm 1-P 6-M CMOS Logic Process
5 mm x 3 mm (Network Controller), 2.4 mm x 2 mm (Sensor)
1.8V
13.56 MHz(TX/HF) 402-405MHz(TX/MICS)
4-stage ATR CMOS
54.9% (HF), 45.2%(MICS)
15 % or 100 & ASK
5.2 mW (Network Controller), 12 μw(Sensor)
Aug. 2008 |
2007
BONE-V2
Technology
Chip Size
Function
Operating Frequency
Power Supply
Power Consumption
Released Date
0.13 μmSMIC 1-P 8-M CMOS Technology
6mm x 6mm
Object Recognition
200MHz (IPs) / 400MHz (NoC)
1.2V
583mW
Sep. 2007
|
2007
BONE-V2
|
Technology
Chip Size
Function
Operating Frequency
Power Supply
Power Consumption
Released Date |
0.13 μmSMIC 1-P 8-M CMOS Technology
6mm x 6mm
Object Recognition
200MHz (IPs) / 400MHz (NoC)
1.2V
583mW
Sep. 2007 |
2007
Biocle II
Technology
Chip Size
Function
Sensitivity
Operating Frequency
Power Supply
Power Consumption
Released Date
0.18 μm CMOS Technology
2 mm x 1.1 mm
Interference-Resilient Transceiver for Body Channel Communication
-65dBm
30 - 120 MHz
1.0/1.5 V
3.7mW
Aug. 2007
|
2007
Biocle II
|
Technology
Chip Size
Function
Sensitivity
Operating Frequency
Power Supply
Power Consumption
Released Date |
0.18 μm CMOS Technology
2 mm x 1.1 mm
Interference-Resilient Transceiver for Body Channel Communication
-65dBm
30 - 120 MHz
1.0/1.5 V
3.7mW
Aug. 2007 |
2007
VitaComp-II
Technology
Chip Size
Power Supply
Operating Frequency
Latency Throughput
Transmission Rate
Sampling Rate
Power Consumption
Released Date
0.25 μm 1P 5M CMOS Logic Process
3 mm x 5 mm
2V
1 MHz
3-cycle, 1-cycle
1-8 Mb/s
0.1 - 1000 Samples/s
1.12 mW
Aug. 2007
|
2007
VitaComp-II
|
Technology
Chip Size
Power Supply
Operating Frequency
Latency Throughput
Transmission Rate
Sampling Rate
Power Consumption
Released Date |
0.25 μm 1P 5M CMOS Logic Process
3 mm x 5 mm
2V
1 MHz
3-cycle, 1-cycle
1-8 Mb/s
0.1 - 1000 Samples/s
1.12 mW
Aug. 2007 |
2007
WiFAN
Technology
Chip Size
Power Supply
Operating Frequency
Processing Speed
Gate Counts
Power Consumption
Functions
Released Date
TSMC 0.25um 1P5M CMOS Technology
1560um x 1280um (Including Pads)
2.5V
10MHz
10MHz
N/A
2.87mW
Fabric Area Network Controller
Jun. 2007
|
2007
WiFAN
|
Technology
Chip Size
Power Supply
Operating Frequency
Processing Speed
Gate Counts
Power Consumption
Functions
Released Date |
TSMC 0.25um 1P5M CMOS Technology
1560um x 1280um (Including Pads)
2.5V
10MHz
10MHz
N/A
2.87mW
Fabric Area Network Controller
Jun. 2007 |
2006
Biocle, Clearphone
Technology
Area
Power supply
Frequency
Gate Counts
Power consumption
Functions
Released Date
0.18 μm TSMC 1-P 6-M CMOS Technology
7.7mm x 5mm
1.8V
400 MHz (NoC) / 200 MHz (Other Part)
838.8K Gates (NAND2 Equiv.)
1.4W (Peak)
Vision Recognition
Dec. 2006
|
2006
Biocle, Clearphone
|
Technology
Area
Power supply
Frequency
Gate Counts
Power consumption
Functions
Released Date |
0.18 μm TSMC 1-P 6-M CMOS Technology
7.7mm x 5mm
1.8V
400 MHz (NoC) / 200 MHz (Other Part)
838.8K Gates (NAND2 Equiv.)
1.4W (Peak)
Vision Recognition
Dec. 2006 |
2006
RamP-VI
Technology
Area
Power supply
Frequency
Transistors
Processing speed
Power management
Power consumption
Functions
Released Date
0.18 μm TSMC 1-P 6-M CMOS Technology
Core: 17.2mm2 , Die: 25mm2
Core: 1.0V - 1.8V, I/O: 3.3V
89MHz - 200MHz
1.57Mtransistors, 29KB SRAM
141Mvertices/s, 50Mpixels/s
Triple power domains with DVFS
52.4mW @ 60fps
OpenGL-ES 2.0
Sep. 2006
|
2006
RamP-VI
|
Technology
Area
Power supply
Frequency
Transistors
Processing speed
Power management
Power consumption
Functions
Released Date |
0.18 μm TSMC 1-P 6-M CMOS Technology
Core: 17.2mm2 , Die: 25mm2
Core: 1.0V - 1.8V, I/O: 3.3V
89MHz - 200MHz
1.57Mtransistors, 29KB SRAM
141Mvertices/s, 50Mpixels/s
Triple power domains with DVFS
52.4mW @ 60fps
OpenGL-ES 2.0
Sep. 2006 |
2006
Clearphone+
Technology
Area
Power supply
Frequency
Power consumption
Functions
Released Date
0.18 μm TSMC 1-P 6-M CMOS Technology
3.74mm2
0.9V
32kHz
108 μW
Digital hearing aid with ear modeling filter
Sep. 2006
|
2006
Clearphone+
|
Technology
Area
Power supply
Frequency
Power consumption
Functions
Released Date |
0.18 μm TSMC 1-P 6-M CMOS Technology
3.74mm2
0.9V
32kHz
108 μW
Digital hearing aid with ear modeling filter
Sep. 2006 |
2006
μ-RamP
Technology
Area
Power supply
Frequency
Capacity
Operation Mode
Date Rate
Power consumption
Latency
Released Date
90nm, diode-switch PRAM, 3-metal CMOS
3,085μm x 1,940μm
1.8V
100MHz
4Mb ( 256k x 16 bit )
SM : Single access mode
BM : Burst access mode
SDM : Setup and debug mode
RM : RISC Operation mode
100Mb/s/pin read and write ( in BM )
SM: 21.6mW BM: 28.4 mW
SM…
|
2006
μ-RamP
|
Technology
Area
Power supply
Frequency
Capacity
Operation Mode
Date Rate
Power consumption
Latency
Released Date |
90nm, diode-switch PRAM, 3-metal CMOS
3,085μm x 1,940μm
1.8V
100MHz
4Mb ( 256k x 16 bit )
SM : Single access mode
BM : Burst access mode
SDM : Setup and debug mode
RM : RISC Operation mode
100Mb/s/pin read and write ( in BM )
SM: 21.6mW BM: 28.4 mW
SM… |
2005
Biocle, Clearphone
Technology
Chip Size
Function
Operating Frequency
Power Supply
Power Consumption
Released Date
0.18 μm DongbuAnam CMOS Technology
5 mm x 5 mm
Body-Coupled PHY Transceiver, Digital Hearing Aid
160MHz, 32kHz
0.9V, 0.9V
2.6mW, 96μW
Dec. 2005
|
2005
Biocle, Clearphone
|
Technology
Chip Size
Function
Operating Frequency
Power Supply
Power Consumption
Released Date |
0.18 μm DongbuAnam CMOS Technology
5 mm x 5 mm
Body-Coupled PHY Transceiver, Digital Hearing Aid
160MHz, 32kHz
0.9V, 0.9V
2.6mW, 96μW
Dec. 2005 |
2005
BioMAP
Technology
Chip Size
Function
Memory
Operating Frequency
Power Supply
Power Consumption
Released Date
0.18 μm DongbuAnam CMOS Technology
5 mm x 5 mm
Body Sensor Network management
768 Kb SRAM
4.2MHz for system bus, 8.192~32.768kHz for Sensor Management
0.6 V core, 0.6 V-1.8 V peripheral
24.2 μW avg
Dec. 2005
|
2005
BioMAP
|
Technology
Chip Size
Function
Memory
Operating Frequency
Power Supply
Power Consumption
Released Date |
0.18 μm DongbuAnam CMOS Technology
5 mm x 5 mm
Body Sensor Network management
768 Kb SRAM
4.2MHz for system bus, 8.192~32.768kHz for Sensor Management
0.6 V core, 0.6 V-1.8 V peripheral
24.2 μW avg
Dec. 2005 |
2005
Logarithm Arithmetic Unit (LAU)
Technology
Chip Size
Gate Count
Function
Operating Frequency
Latency/Throughput
Power Supply
Power Consumption
Released Date
0.18 μm DongbuAnam CMOS Technology
1 mm x 1 mm (core) / 4 mm x 4 mm (die, pad limited)
9 K
Logarithmic Arithmetic Unit
213 MHz
2-cycle/1-cycle
1.8 V
2.18 mW (1-operand) / 3.07 mW (2-operand)
Mar. 2005
|
2005
Logarithm Arithmetic Unit (LAU)
|
Technology
Chip Size
Gate Count
Function
Operating Frequency
Latency/Throughput
Power Supply
Power Consumption
Released Date |
0.18 μm DongbuAnam CMOS Technology
1 mm x 1 mm (core) / 4 mm x 4 mm (die, pad limited)
9 K
Logarithmic Arithmetic Unit
213 MHz
2-cycle/1-cycle
1.8 V
2.18 mW (1-operand) / 3.07 mW (2-operand)
Mar. 2005 |
2005
RamP-C2
Technology
Chip Size
Gate Count
Function
Clock Frequency
Pixel Fill Rate
Power Supply
Power Consumption
Released Date
0.18 μm DongbuAnam CMOS Technology
5 mm x 5 mm
330 KGate+164 Kb embedded SRAM
- Gouraud Shading
- Texture Mapping / Blending
- Pixel Alpha Blending
10 MHz
20 Mpixels/s
1.8 V (Core) / 3.3 V (I/O)
< 17.2 mW
Mar. 2005
|
2005
RamP-C2
|
Technology
Chip Size
Gate Count
Function
Clock Frequency
Pixel Fill Rate
Power Supply
Power Consumption
Released Date |
0.18 μm DongbuAnam CMOS Technology
5 mm x 5 mm
330 KGate+164 Kb embedded SRAM
- Gouraud Shading
- Texture Mapping / Blending
- Pixel Alpha Blending
10 MHz
20 Mpixels/s
1.8 V (Core) / 3.3 V (I/O)
< 17.2 mW
Mar. 2005 |
2005
Body Channel Tester, RFID+Sensor, Bandgap Reference
Technology
Chip Size
Function
Clock Frequency
Power Supply
Power Consumption
Released Date
0.18 μm DongbuAnam CMOS Technology
2 mm x 2 mm
- Human Body Communication
- Pixel Alpha Blending
- RF Powered Sensors(Temperature and Photo Sensor)
- 1MHz (Body Channel Communication)
- 40KHz (RFID+Sensor)
- N/A (Bandgap Reference)
1 V/ 1.5-2.5 V / N/A
250 μ W/ 5 μ W / N/A
…
|
2005
Body Channel Tester, RFID+Sensor, Bandgap Reference
|
Technology
Chip Size
Function
Clock Frequency
Power Supply
Power Consumption
Released Date |
0.18 μm DongbuAnam CMOS Technology
2 mm x 2 mm
- Human Body Communication
- Pixel Alpha Blending
- RF Powered Sensors(Temperature and Photo Sensor)
- 1MHz (Body Channel Communication)
- 40KHz (RFID+Sensor)
- N/A (Bandgap Reference)
1 V/ 1.5-2.5 V / N/A
250 μ W/ 5 μ W / N/A
… |
2004
RamP-Lite
Technology
Chip Size
Gate Count
Function
Clock Frequency
Pixel Fill Rate
Power Supply
Power Consumption
Pin Package
Released Date
Samsung 0.18 μm 1-poly 6-metal CMOS Technology
5 mm x 5 mm (Core: 1.59 mm x 1.59 mm)
181 K
- Lighting
- Triangle Setup
- Gouraud Shading
- Texture Mapping
- Alpha Blending
20 MHz
20 Mpixels/s
1.8 V (Core) / 3.3 V (I/O)
14.7 mW
208 pin QFP
Oct. 2004…
|
2004
RamP-Lite
|
Technology
Chip Size
Gate Count
Function
Clock Frequency
Pixel Fill Rate
Power Supply
Power Consumption
Pin Package
Released Date |
Samsung 0.18 μm 1-poly 6-metal CMOS Technology
5 mm x 5 mm (Core: 1.59 mm x 1.59 mm)
181 K
- Lighting
- Triangle Setup
- Gouraud Shading
- Texture Mapping
- Alpha Blending
20 MHz
20 Mpixels/s
1.8 V (Core) / 3.3 V (I/O)
14.7 mW
208 pin QFP
Oct. 2004… |
2004
Preamplifier, PLL, Sigma-Delta Modulator
Technology
Chip Size
Function
Clock Frequency
Power Supply
Power Consumption
Released Date
0.25 μm DongbuAnam CMOS Technology
2 mm x 2 mm
- Automatic Gain Control Preamplifier with Exponential Gain Control
- PLL
- Sigma-Delta Modulator
N/A (Preamplifier) / 2 GHz (PLL) / 1/2 MHz (Modulator)
1.1 V / 2.0 V / 0.9 V
40 μ W
Sep. 2004
|
2004
Preamplifier, PLL, Sigma-Delta Modulator
|
Technology
Chip Size
Function
Clock Frequency
Power Supply
Power Consumption
Released Date |
0.25 μm DongbuAnam CMOS Technology
2 mm x 2 mm
- Automatic Gain Control Preamplifier with Exponential Gain Control
- PLL
- Sigma-Delta Modulator
N/A (Preamplifier) / 2 GHz (PLL) / 1/2 MHz (Modulator)
1.1 V / 2.0 V / 0.9 V
40 μ W
Sep. 2004 |
2004
RamP-V
Technology
Chip Size
Power Supply
Operating Frequency
Processing Speed
GateCounts
Transistors
Power Consumption
Functions
Released Date
0.18 μm 1P 6M CMOS Logic Process
6 mm x6 mm
3.3V (I/O), 1.8V(Core)
200 MHz
50M Verticles/s, 50Mpixel/s (Bilinear Texture Filtering)
2M Logic Gates
96kB SRAM
< 155mW
Fixed-Point Programmable Vertex Shader
Sep. 2004
|
2004
RamP-V
|
Technology
Chip Size
Power Supply
Operating Frequency
Processing Speed
GateCounts
Transistors
Power Consumption
Functions
Released Date |
0.18 μm 1P 6M CMOS Logic Process
6 mm x6 mm
3.3V (I/O), 1.8V(Core)
200 MHz
50M Verticles/s, 50Mpixel/s (Bilinear Texture Filtering)
2M Logic Gates
96kB SRAM
< 155mW
Fixed-Point Programmable Vertex Shader
Sep. 2004 |
2004
Autonomous SRAM with SAC Scheme
Technology
Chip Size
Density
Function
Power Supply
Released Date
Samsung 80 nm Double-Stacked Cell Technology
1152 μ m x 1728 μ m
512 Kb
- Sensing Internal Status of SRAM
- Analyzing the Data and Control Internal Parameters
1.6 V (Internal) / 3.3 V (External)
Aug. 2004
|
2004
Autonomous SRAM with SAC Scheme
|
Technology
Chip Size
Density
Function
Power Supply
Released Date |
Samsung 80 nm Double-Stacked Cell Technology
1152 μ m x 1728 μ m
512 Kb
- Sensing Internal Status of SRAM
- Analyzing the Data and Control Internal Parameters
1.6 V (Internal) / 3.3 V (External)
Aug. 2004 |
2004
Network-on-Chip with High-speed Serial Links
Technology
Chip Size
Function
Clock Frequency
Power Supply
Power Consumption
Released Date
0.18 μm DongbuAnam CMOS Technology
5 mm x 5 mm
- A Network-on-Chip with 3Gbps/wire Serialized On-chip
Interconnect Using Adaptive Control Schemes
400MHz input, 1.6 ~ 3.0 Gb/s/wire operation
1.8V (core), 3.3V (I/O)
N/A
May. 2004
|
2004
Network-on-Chip with High-speed Serial Links
|
Technology
Chip Size
Function
Clock Frequency
Power Supply
Power Consumption
Released Date |
0.18 μm DongbuAnam CMOS Technology
5 mm x 5 mm
- A Network-on-Chip with 3Gbps/wire Serialized On-chip
Interconnect Using Adaptive Control Schemes
400MHz input, 1.6 ~ 3.0 Gb/s/wire operation
1.8V (core), 3.3V (I/O)
N/A
May. 2004 |
2003
Analog Front-End for USB-OTG
Technology
Chip Size
Function
Clock Frequency
Power Supply
Output Voltage
Power Efficiency
Load Current
Released Date
0.13 μm Samsung 3.3 V CMOS Technology
0.5 mm x 0.5 mm
Analog Front-End Compatible with USB On-The-Go
500KHz
3.3 V
5.0 V
> 70 %
> 30 mA
Oct. 2003
|
2003
Analog Front-End for USB-OTG
|
Technology
Chip Size
Function
Clock Frequency
Power Supply
Output Voltage
Power Efficiency
Load Current
Released Date |
0.13 μm Samsung 3.3 V CMOS Technology
0.5 mm x 0.5 mm
Analog Front-End Compatible with USB On-The-Go
500KHz
3.3 V
5.0 V
> 70 %
> 30 mA
Oct. 2003 |
2003
An 800MHz Star-Connected On-Chip Network
Technology
Chip Size
Function
Clock Frequency
Power Supply
Power Consumption
Released Date
0.18 μm DongnuAnam CMOS Technology
5 mm x 5 mm
Multimedia SoC with Low-Power On-Chip Network
1.6 GHz for On-Chip Network
100 MHz for Processors
1.8 V (core), 3.3 V (I/O), 0.6 V (Small-swing-Interconnection)
On-Chip Network < 51 mW
Sep. 2003
|
2003
An 800MHz Star-Connected On-Chip Network
|
Technology
Chip Size
Function
Clock Frequency
Power Supply
Power Consumption
Released Date |
0.18 μm DongnuAnam CMOS Technology
5 mm x 5 mm
Multimedia SoC with Low-Power On-Chip Network
1.6 GHz for On-Chip Network
100 MHz for Processors
1.8 V (core), 3.3 V (I/O), 0.6 V (Small-swing-Interconnection)
On-Chip Network < 51 mW
Sep. 2003 |
2003
CAMi
Technology
Chip Size
Function
Memory Capacity
Power Supply
Search Time
Energy Efficiency
Released Date
0.10 μm Samsung CMOS Process Technology
4.2 mm x 2.8 mm
- Low Power CAM Architecture Including
- Hidden Bank Selection Scheme
- Match Line Repeater
- Sub Match Line
- Column Decoding
144 Kb
1.2 V
2.2 ns
0.7 fJ/bit/search
Aug. 2003
|
2003
CAMi
|
Technology
Chip Size
Function
Memory Capacity
Power Supply
Search Time
Energy Efficiency
Released Date |
0.10 μm Samsung CMOS Process Technology
4.2 mm x 2.8 mm
- Low Power CAM Architecture Including
- Hidden Bank Selection Scheme
- Match Line Repeater
- Sub Match Line
- Column Decoding
144 Kb
1.2 V
2.2 ns
0.7 fJ/bit/search
Aug. 2003 |
2002
Motion Express
Technology
Chip Size
Function
Clock Frequency
Transistor Counts
Power Supply
Power Consumption
Released Date
0.16 μm Hynix CMOS DRAM Technology
6 mm x 6 mm
A MPEG
- 4 acceleration IP for Portable Video Application
27 MHz
~10,000
2.5 V(core), 3.3 V(I/O)
< 6 mW
Oct. 2002
|
2002
Motion Express
|
Technology
Chip Size
Function
Clock Frequency
Transistor Counts
Power Supply
Power Consumption
Released Date |
0.16 μm Hynix CMOS DRAM Technology
6 mm x 6 mm
A MPEG
- 4 acceleration IP for Portable Video Application
27 MHz
~10,000
2.5 V(core), 3.3 V(I/O)
< 6 mW
Oct. 2002 |
2002
RamP- IV
Technology
Chip Size
Function
Clock Frequency
Transistor Counts
Power Supply
Power Consumption
Released Date
0.16 μm Hynix CMOS DRAM Technology
6 mm x 6 mm
- 3D Graphic Processor for Mobile Application
- 132/33 MHz for FAST mode
66/16.5 MHz for NORMAL mode
33/8.25 MHz for SLOW mode
60,000,000
2.3 V
210 mW
Oct. 2002
|
2002
RamP- IV
|
Technology
Chip Size
Function
Clock Frequency
Transistor Counts
Power Supply
Power Consumption
Released Date |
0.16 μm Hynix CMOS DRAM Technology
6 mm x 6 mm
- 3D Graphic Processor for Mobile Application
- 132/33 MHz for FAST mode
66/16.5 MHz for NORMAL mode
33/8.25 MHz for SLOW mode
60,000,000
2.3 V
210 mW
Oct. 2002 |
2002
An 800MHz Star-Connected On-Chip Network
Technology
Chip Size
Function
Clock Frequency
Transistor Counts
Power Supply
Power Consumption
Released Date
0.16 μm DRAM Technology with 3 AI
10.8 mm x 6.0 mm
- On-chip packet transaction with plesiochronous communication
- Off-chip packet transaction for scalability
core @ 800 MHz
IP Block @ 200 MHz
81,000 (without 1 Kb SRAM)
2.3 V
264 mW
Oct. 2002
|
2002
An 800MHz Star-Connected On-Chip Network
|
Technology
Chip Size
Function
Clock Frequency
Transistor Counts
Power Supply
Power Consumption
Released Date |
0.16 μm DRAM Technology with 3 AI
10.8 mm x 6.0 mm
- On-chip packet transaction with plesiochronous communication
- Off-chip packet transaction for scalability
core @ 800 MHz
IP Block @ 200 MHz
81,000 (without 1 Kb SRAM)
2.3 V
264 mW
Oct. 2002 |
2002
10 Gbps/port 8x8 Shared-bus Switch Fabric
Technology
Chip Size
Function
Clock Frequency
Transistor Counts
Power Supply
Power Consumption
Released Date
0.16 μm DRAM Technology with 3 AI
4 mm x 9 mm
10 Gbps/port 8x8 Shared-bus witch fabric with Hierarchical Output
Buffer
200 MHz for Dual port SRAM
20 MHz for Embedded DRAM (w/ 512 bits I/O)
32 Kb SRAM, 1 Mb DRAM
2.3 V
240 mW
Oct. 2002
|
2002
10 Gbps/port 8x8 Shared-bus Switch Fabric
|
Technology
Chip Size
Function
Clock Frequency
Transistor Counts
Power Supply
Power Consumption
Released Date |
0.16 μm DRAM Technology with 3 AI
4 mm x 9 mm
10 Gbps/port 8x8 Shared-bus witch fabric with Hierarchical Output
Buffer
200 MHz for Dual port SRAM
20 MHz for Embedded DRAM (w/ 512 bits I/O)
32 Kb SRAM, 1 Mb DRAM
2.3 V
240 mW
Oct. 2002 |
2001
Fully Differential CMOS TIA
Technology
Chip Size
Function
Clock Frequency
Power Supply
Power Consumption
Released Date
0.25 μm Anam CMOS & Telephus Multichip-on-Oxide Process
Technology
5 mm x 5 mm
0.13 mm x 0.16 mm
250 μ m x 350 μ m
Transimpedance amplifier
N/A
2.5 V
27 mW @ 1 Gb/s
Aug. 2001
|
2001
Fully Differential CMOS TIA
|
Technology
Chip Size
Function
Clock Frequency
Power Supply
Power Consumption
Released Date |
0.25 μm Anam CMOS & Telephus Multichip-on-Oxide Process
Technology
5 mm x 5 mm
0.13 mm x 0.16 mm
250 μ m x 350 μ m
Transimpedance amplifier
N/A
2.5 V
27 mW @ 1 Gb/s
Aug. 2001 |
2001
MPTC
Technology
Chip Size
Function
Clock Frequency
Power Supply
Power Consumption
Released Date
0.16 μm HynixCMOS DRAM Technology
15.6 mm x 7.5 mm
Multilevel Parallel Texture Cache
150 MHz
2.5 V
89 mW
May. 2001
|
2001
MPTC
|
Technology
Chip Size
Function
Clock Frequency
Power Supply
Power Consumption
Released Date |
0.16 μm HynixCMOS DRAM Technology
15.6 mm x 7.5 mm
Multilevel Parallel Texture Cache
150 MHz
2.5 V
89 mW
May. 2001 |
2001
4Gb/s CDR
Technology
Chip Size
Function
Clock Frequency
Power Supply
Power Consumption
Released Date
0.25 μm Dongbu CMOS Technology
0.9 mm x 1.0 mm
4-Gb/s Clock and Data Recovery(CDR)
Circuit performing 1:4 DEMUX
500 MHz
2.5 V
70 mW
May. 2001
|
2001
4Gb/s CDR
|
Technology
Chip Size
Function
Clock Frequency
Power Supply
Power Consumption
Released Date |
0.25 μm Dongbu CMOS Technology
0.9 mm x 1.0 mm
4-Gb/s Clock and Data Recovery(CDR)
Circuit performing 1:4 DEMUX
500 MHz
2.5 V
70 mW
May. 2001 |
2000
2Gb/s CDR
Technology
Chip Size
Function
Clock Frequency
Power Supply
Power Consumption
Released Date
0.25 μm Anam CMOS Technology
1.0 mm x 2.0 mm
2-Gb/s Clock and Data Recovery(CDR)
Circuit performing 1:2 DEMUX
1 GHz
2.5 V
100 mW
Dec. 2000
|
2000
2Gb/s CDR
|
Technology
Chip Size
Function
Clock Frequency
Power Supply
Power Consumption
Released Date |
0.25 μm Anam CMOS Technology
1.0 mm x 2.0 mm
2-Gb/s Clock and Data Recovery(CDR)
Circuit performing 1:2 DEMUX
1 GHz
2.5 V
100 mW
Dec. 2000 |
2000
RamP-II
Technology
Chip Size
Function
Clock Frequency
Power Supply
Power Consumption
Released Date
0.18 μm Hynix CMOS EML Technology
84 mm2
One-Chip PDA Solution
20/80/100 MHz
1.8/2.5 V
160 mW
Jul. 2000
|
2000
RamP-II
|
Technology
Chip Size
Function
Clock Frequency
Power Supply
Power Consumption
Released Date |
0.18 μm Hynix CMOS EML Technology
84 mm2
One-Chip PDA Solution
20/80/100 MHz
1.8/2.5 V
160 mW
Jul. 2000 |
2000
2.5Gb/s LVDS Transmitter
Technology
Chip Size
Function
Clock Frequency
Power Supply
Power Consumption
Released Date
0.25 μm Anam CMOS Technology
2.0 mm x 2.0 mm
2.5 Gb/s LVDS Transmitter for optical interconnections
N/A
2.5 V
50 mW
Feb. 2000
|
2000
2.5Gb/s LVDS Transmitter
|
Technology
Chip Size
Function
Clock Frequency
Power Supply
Power Consumption
Released Date |
0.25 μm Anam CMOS Technology
2.0 mm x 2.0 mm
2.5 Gb/s LVDS Transmitter for optical interconnections
N/A
2.5 V
50 mW
Feb. 2000 |
2000
1.3Gb/s LVDS Receiver
Technology
Chip Size
Function
Clock Frequency
Power Supply
Power Consumption
Released Date
0.25 μm Anam CMOS Technology
2.0 mm x 2.0 mm
1.3 Gb/s LVDS receiver for optical interconnections
N/A
2.5 V
51 mW
Feb. 2000
|
2000
1.3Gb/s LVDS Receiver
|
Technology
Chip Size
Function
Clock Frequency
Power Supply
Power Consumption
Released Date |
0.25 μm Anam CMOS Technology
2.0 mm x 2.0 mm
1.3 Gb/s LVDS receiver for optical interconnections
N/A
2.5 V
51 mW
Feb. 2000 |
1999
Ultra Fast 64bit Adder
Technology Chip Size Function Clock Frequency Power Supply Power Consumption Released Date
0.25 μm Anam CMOS Technology
1.4 mm x 0.6 mm
Dynamic 64bit Adder
N/A
2.5 V
100 mW @ 500 MHz
Dec. 1999
|
1999
Ultra Fast 64bit Adder
|
Technology Chip Size Function Clock Frequency Power Supply Power Consumption Released Date |
0.25 μm Anam CMOS Technology
1.4 mm x 0.6 mm
Dynamic 64bit Adder
N/A
2.5 V
100 mW @ 500 MHz
Dec. 1999 |
1999
Ultra Fast 64bit Adder
Technology Chip Size Function Clock Frequency Power Supply Power Consumption Released Date
0.25 μm Anam CMOS Technology 0.8 mm x 0.15 mm High-speed 64bit Adder with carry in/out 1 GHz 2.5 V N/A Dec. 1999
|
1999
Ultra Fast 64bit Adder
|
Technology Chip Size Function Clock Frequency Power Supply Power Consumption Released Date |
0.25 μm Anam CMOS Technology 0.8 mm x 0.15 mm High-speed 64bit Adder with carry in/out 1 GHz 2.5 V N/A Dec. 1999 |
1999
RamP-I
Technology
Chip Size
Function
Clock Frequency
Power Supply
Power Consumption
Released Date
0.35 μm Hynix CMOS DRAM Technology
56 mm2
EML 3D- Rendering Engine
100 MHz
3.3 V
590 mW
Aug. 1999
|
1999
RamP-I
|
Technology
Chip Size
Function
Clock Frequency
Power Supply
Power Consumption
Released Date |
0.35 μm Hynix CMOS DRAM Technology
56 mm2
EML 3D- Rendering Engine
100 MHz
3.3 V
590 mW
Aug. 1999 |
