2022 Sangwoo Ha, Sangjin Kim, Donghyeon Han, Soyeon Um, and Hoi-Jun Yoo
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Title | A 36.2 dB High SNR and PVT/Leakage-robust eDRAM Computing-In-Memory Macro with Segmented BL and Reference Cell Array |
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Authors | Sangwoo Ha, Sangjin Kim, Donghyeon Han, Soyeon Um, and Hoi-Jun Yoo |
Year | 2022 |
Publication | TCAS-II 2022 |
Link | https://ieeexplore.ieee.org/document/9736994 393회 연결 |
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- 이전글Seokchan Song, Soyeon Kim, Gwangtae Park, Donghyeon Han, and Hoi-Jun Yoo 22.03.18
- 다음글Kwonjoon Lee and Hoi-Jun Yoo 19.02.13
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