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INTERNATIONAL JOURNAL PAPER

2022 Sangwoo Ha, Sangjin Kim, Donghyeon Han, Soyeon Um, and Hoi-Jun Yoo

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작성자 운영자 댓글 0건 조회 872회 작성일 22-03-18 09:29

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Title A 36.2 dB High SNR and PVT/Leakage-robust eDRAM Computing-In-Memory Macro with Segmented BL and Reference Cell Array
Authors Sangwoo Ha, Sangjin Kim, Donghyeon Han, Soyeon Um, and Hoi-Jun Yoo
Year 2022
Publication TCAS-II 2022
Link https://ieeexplore.ieee.org/document/9736994 393회 연결
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